Substrate processing method, substrate processing apparatus and storage medium

ABSTRACT

Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Japanese Patent Application Nos.2013-176086, 2014-021599 and 2014-021710 filed on Aug. 27, 2013, Feb. 6,2014 and Feb. 6, 2014, respectively, the entire disclosures of which areincorporated herein by reference.

TECHNICAL FIELD

The embodiments described herein pertain generally to a substrateprocessing method, a substrate processing apparatus and a storagemedium.

BACKGROUND

Conventionally, there is known a dry etching process in which a dryetching process is performed on a substrate such as a semiconductorwafer to expose a part of a metal wiring formed within the substrate(see, for example, Patent Document 1).

If, however, the substrate is exposed for a long time after the metalwiring within the substrate is exposed through such a dry etchingprocess, an adverse effect such as oxidation of the exposed metal wiringor the like may be caused. For this reason, there is set a time limit(Q-time) in exposure time after the dry etching process.

Patent Document 1: Japanese Patent Laid-open Publication No. 2010-027786

In the above-described conventional technology, however, time managementis required to keep the time limit (Q-time). Thus, productivity may bedecreased due to the increase of the number of required processes.

The problem that productivity is decreased may also occur whenperforming a wet etching process, a film forming process, or the like aswell as when performing the dry etching process.

SUMMARY

In view of the foregoing problem, example embodiments provide asubstrate processing method, a substrate processing apparatus and astorage medium capable of improving productivity.

In one example embodiment, a substrate processing method includes aprocessing liquid supplying process of supplying a processing liquid,which contains a volatile component and forms a film on a substrate,onto the substrate on which a pre-treatment, which requires atmospheremanagement or time management after the pre-treatment, is performed; andan accommodating process of accommodating, in a transfer container, thesubstrate on which the processing liquid is solidified or cured byvolatilization of the volatile component.

In accordance with the example embodiment, it is possible to improveproductivity.

The foregoing summary is illustrative only and is not intended to be inany way limiting. In addition to the illustrative aspects, embodiments,and features described above, further aspects, embodiments, and featureswill become apparent by reference to the drawings and the followingdetailed description.

BRIEF DESCRIPTION OF THE DRAWINGS

In the detailed description that follows, embodiments are described asillustrations only since various changes and modifications will becomeapparent to those skilled in the art from the following detaileddescription. The use of the same reference numbers in different figuresindicates similar or identical items.

FIG. 1A is a diagram for describing a substrate processing method inaccordance with a first example embodiment;

FIG. 1B is a diagram for describing the substrate processing method inaccordance with the first example embodiment;

FIG. 1C is a diagram for describing the substrate processing method inaccordance with the first example embodiment;

FIG. 2 is a diagram illustrating a schematic configuration of asubstrate processing system in accordance with the first exampleembodiment;

FIG. 3 is a diagram illustrating a schematic configuration of a firstprocessing apparatus;

FIG. 4 is a diagram illustrating a schematic configuration of a secondprocessing apparatus;

FIG. 5 is a schematic diagram depicting an example configuration of adry etching unit;

FIG. 6 is a schematic diagram depicting an example configuration of afirst liquid processing unit;

FIG. 7 is a schematic diagram depicting an example configuration of asecond liquid processing unit;

FIG. 8 is a flowchart for describing a process sequence of processing asubstrate in accordance with the first example embodiment;

FIG. 9A is a diagram showing an example of a rear surface cleaningprocess;

FIG. 9B is a diagram showing an example of the rear surface cleaningprocess

FIG. 10 is a diagram illustrating another example of the rear surfacecleaning process;

FIG. 11 is a diagram illustrating still another example of the rearsurface cleaning process;

FIG. 12 is a diagram depicting a schematic configuration of a firstprocessing apparatus in accordance with a third example embodiment;

FIG. 13 is a diagram depicting a schematic configuration of a secondprocessing apparatus in accordance with the third example embodiment;

FIG. 14 is a diagram depicting a schematic configuration of a secondprocessing apparatus in accordance with a fourth example embodiment;

FIG. 15 is a diagram depicting a schematic configuration of a removingunit in accordance with the fourth example embodiment;

FIG. 16 is a diagram depicting a schematic configuration of a secondprocessing apparatus in accordance with a fifth example embodiment; and

FIG. 17 is a table showing example processes to which the film formingliquid supplying process and the removing process are applied.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part of the description. In thedrawings, similar symbols typically identify similar components, unlesscontext dictates otherwise. Furthermore, unless otherwise noted, thedescription of each successive drawing may reference features from oneor more of the previous drawings to provide clearer context and a moresubstantive explanation of the current example embodiment. Still, theexample embodiments described in the detailed description, drawings, andclaims are not meant to be limiting. Other embodiments may be utilized,and other changes may be made, without departing from the spirit orscope of the subject matter presented herein. It will be readilyunderstood that the aspects of the present disclosure, as generallydescribed herein and illustrated in the drawings, may be arranged,substituted, combined, separated, and designed in a wide variety ofdifferent configurations, all of which are explicitly contemplatedherein.

Hereinafter, a substrate processing method, a substrate processingapparatus, and a storage medium in accordance with example embodimentswill be described in detail with reference to the accompanying drawings.It should be noted herein that the example embodiments are not limiting.

First Example Embodiment Substrate Processing Method

First, a substrate processing method in accordance with a first exampleembodiment will be elaborated with reference to FIG. 1A to FIG. 1C. FIG.1A to FIG. 1C are diagrams for describing the substrate processingmethod of the first example embodiment.

In accordance with, the substrate processing method of the first exampleembodiment, it is possible to process a substrate such as asemiconductor wafer (hereinafter, simply referred to as “wafer W”), inwhich at least a part of a metal wiring formed therein is exposed,without being restricted by Q-time.

Here, the term “Q-time” means, for example, a time limit set in theexposure time after a dry etching in order to suppress the metal wiringexposed by the dry etching from being oxidized.

Once the Q-time is set, time management for keeping the Q-time isrequired. Accordingly, productivity may be decreased due to the increaseof the number of required processes. Further, if the set Q-time isshort, line management may be difficult. Thus, there is a concern thatthe productivity is decreased since the line management is complicated.

As depicted in FIG. 1A, a wafer W has, for example, a wiring layer 101,a liner film 103 and an interlayer insulating film 104. The wiring layer101, the liner film 103 and the interlayer insulating film 104 arestacked on top of each other in this sequence. A Cu wiring 102 as anexample of a metal wiring is formed in the wiring layer 101.

Further, the wafer W also has a via hole 106. The via hole 106 is formedby the dry etching. The via hole 106 is extended to the wiring layer101, and a surface of the Cu wiring 102 is exposed at a bottom of thevia hole 106.

In the substrate processing method in accordance with the first exampleembodiment, as depicted in FIG. 1B, a processing liquid, which containsa volatile component and is configured to form a film on the wafer W(hereinafter, simply referred to as “film forming liquid”), is suppliedonto the wafer W. To elaborate, in the first example embodiment, a filmforming liquid for forming a topcoat film on the wafer W (hereinafter,referred to as “topcoat liquid”) is supplied onto the wafer W.

Here, the topcoat film refers to a protection film coated on a topsurface of a resist film in order to suppress an immersion liquid frombeing introduced into the resist film. Here, the immersion liquid may bea liquid for use in, for example, liquid immersion exposure in alithography process.

As the volatile component contained in the topcoat liquid isvolatilized, the topcoat liquid supplied on the wafer W undergoes volumeshrinkage to be solidified or cured into a topcoat film (see FIG. 1C).Further, the topcoat liquid also includes an acrylic resin of whichvolume tends to be shrunk while being solidified or cured. The volumeshrinkage of the topcoat liquid is also caused by cure shrinkage of thisacrylic resin as well. Here, the term “being solidified” implieschanging into a solid, and the term “being cured” implies that moleculesare interlinked to be a polymer (e.g., cross-linking, polymerization,etc.).

If the topcoat film is formed on the wafer W, the Cu wiring 102 exposedby the dry etching is covered with the topcoat film. In this state, thewafer W is accommodated into a transfer container.

According to the substrate processing method of the first exampleembodiment, by protecting the exposed Cu wiring 102 with the topcoatfilm, the exposed Cu wiring 102 may be suppressed from being adverselyinfluenced by, for example, oxidation. Thus, the Q-time need not be set.Since the Q-time is unnecessary, the time management for observing theQ-time is not needed, so that complication of line management that mightbe accompanied by observance of the Q-time can be avoided. Accordingly,in accordance with the substrate processing method of the first exampleembodiment, productivity can be improved.

Further, a reaction product P grows as a residual gas in the dry etchingreacts with moisture or oxygen in the atmosphere. However, in accordancewith the substrate processing method of the first example embodiment, byprotecting the exposed Cu wiring 102 with the topcoat film, growth ofthe reaction product P can be suppressed. Accordingly, an adverseinfluence from the reaction product P, such as deterioration ofelectrical characteristics or decrease of yield, can be suppressed.

Further, in the substrate processing method in accordance with the firstexample embodiment, after the wafer W accommodated into the transfercontainer is taken out, there is performed a process of removing thetopcoat film formed on the wafer W. Through this process of removing thetopcoat film, the reaction product P such as polymer, which is generatedby dry etching or ashing, can be removed.

To elaborate, a removing liquid configured to remove the topcoat film issupplied onto the topcoat film. In the first example embodiment, analkali developer is used as the removing liquid.

By supplying the alkali developer, the topcoat film is peeled off fromthe wafer W. At this time, the reaction product P remaining on the waferW is also peeled off from the wafer W along with the topcoat film.Accordingly, the reaction product P can be removed.

As stated above, according to the substrate processing method of thefirst example embodiment, since the reaction product can be removedwithout using chemical action, it is possible to suppress damage on theCu wiring 102 that might be caused by the etching or the like.

Thus, in accordance with the substrate processing method of the firstexample embodiment, it is possible to remove the reaction product Premaining on the wafer W after the dry etching or ashing, whilesuppressing damage on the wafer W. Further, the topcoat film isefficiently removed from the wafer W without performing the patternexposure after formed on the wafer W.

The topcoat liquid undergoes volume shrinkage to be solidified or curedinto the topcoat film. The reaction product P remaining on the wafer Wcan be removed from the wafer W by a distortion (tensile force) causedby the volume shrinkage of the topcoat liquid.

Since the volume shrinkage of the topcoat liquid occurs as a result ofthe volatilization of the volatile component and the cure shrinkage ofthe acrylic resin, a volume shrinkage rate thereof may be higher thanthat of a film forming liquid containing a volatile component only.Thus, the reaction product P can be peeled off from the wafer Wforcibly. Especially, since the degree of cure shrinkage of the acrylicresin is higher than that of other resins such as an epoxy resin, theacrylic resin can effectively remove the reaction product P, so that theacrylic resin is suitable for the topcoat liquid.

Further, the topcoat film is swelled when it is peeled off by the alkalideveloper. Thus, in accordance with the substrate processing method ofthe first example embodiment, it is possible to remove the reactionproduct P from the wafer W forcibly through volume expansion caused bythe swelling of the topcoat film as well as the volume shrinkage causedby the volatilization of the topcoat liquid.

Further, in the first example embodiment, by using the alkali liquid toremove the reaction product P, the removing efficiency may be increased.

By supplying the alkali developer, zeta potentials having the samepolarity are generated on the surfaces of the wafer W and the reactionproduct P. The reaction product P peeled off from the wafer W by thevolume change of the topcoat liquid is charged with the zeta potentialhaving the same polarity as that of the wafer W, so that the reactionproduct P and the wafer W are repelled against each other. As a result,the reaction product P can be suppressed from being re-attached to thewafer W.

As mentioned above, after the reaction product P is removed from thewafer W or the like through the volume shrinkage of the topcoat film, bygenerating the zeta potentials having the same polarity on the wafer Wand the reaction product P, it is possible to suppress the reactionproduct P from being re-attached to the wafer W. Thus, the removingefficiency for the reaction product P can be increased.

Further, the alkali developer may contain at least one of, but notlimited to, ammonia, TMAH (Tetra Methyl Ammonium Hydroxide), and acholine aqueous liquid.

Further, according to the substrate processing method of the firstexample embodiment, it is also possible to remove the reaction product Pthat has entered the via hole 106, which has been difficult to beremoved in a cleaning method using a physical force, for example.

The topcoat film formed on the wafer W is completely removed from thewafer W. Thus, after the topcoat film is removed, the wafer W returns tothe state before the topcoat liquid is supplied, i.e. a state in whichthe Cu wiring 102 is exposed.

<Configuration of Substrate Processing System>

Now, a substrate processing system configured to perform theabove-described substrate processing method will be explained withreference to FIG. 2. FIG. 2 is a diagram depicting a schematicconfiguration of the substrate processing system in accordance with thefirst example embodiment

As depicted in FIG. 2, the substrate processing system 1 in the firstexample embodiment includes a first processing apparatus 2 as apre-treatment apparatus and a second processing apparatus 3 as apost-treatment apparatus. Further, the substrate processing system 1also includes a first control device 4A and a second control device 4B.

The first processing apparatus 2 is configured to perform the dryetching or supply a topcoat liquid onto the wafer W, and the secondprocessing apparatus 3 is configured to supply the alkali developer ontothe wafer W processed by the first processing apparatus 2.

The first control device 4A may be implemented by, but not limited to, acomputer and includes a control unit 401 and a storage unit 402. Thestorage unit 402 includes a storage device such as a RAM (Random AccessMemory), a ROM (Read Only Memory), a hard disk, etc., and is configuredto store therein programs for controlling various kinds of processesperformed in the first processing apparatus 2. The control unit 401 maybe, but not limited to, a CPU (Central Processing Unit). The controlunit 401 reads out the programs from the storage unit 402 and executesthe programs to control the operation of the first processing apparatus2.

Likewise, the second control device 4B may also be implemented by, forexample a computer and includes a control unit 403 and a storage unit404. The storage unit 404 includes a storage device such as a RAM, aROM, a hard disk, etc., and is configured to store therein programs forcontrolling various kinds of processes performed in the secondprocessing apparatus 3. The control unit 403 may be, but not limited to,a CPU. The control unit 403 reads out the programs from the storage unit404 and executes the programs to control the operation of the secondprocessing apparatus 3.

Here, the programs may be stored in a computer-readable storage mediumand installed in the storage unit 402 of the first control device 4A orthe storage unit 404 of the second control device 4B from the storagemedium. The computer-readable storage medium may include, but notlimited to, a hard disk HD, a flexible disk (FD), a compact disk (CD), amagnet optical disk (MO), a memory card, and so forth.

<Configuration of First Processing Apparatus>

Now, a configuration of the first processing apparatus 2 will bediscussed with reference to FIG. 3. FIG. 3 is a diagram depicting aschematic configuration of the first processing apparatus 2. In thefollowing description, to clarify a positional relationship, X, Y and Zaxes orthogonal to each other are defined, and a positive direction onthe Z axis is set as a vertical upward direction.

As shown in FIG. 3, the first processing apparatus 2 includes aloading/unloading station 5 and a processing station 6. Theloading/unloading station 5 and the processing station 6 are locatedadjacent to each other.

The loading/unloading station 5 includes a mounting unit 10 and atransfer unit 11. The mounting unit 10 is configured to mount thereon amultiple number of transfer containers (hereinafter, referred to as“carriers C”) accommodating therein multiple wafers W in a horizontalposture.

The transfer unit 11 is located adjacent to the mounting unit 10 andincludes therein a substrate transfer device 111. The substrate transferdevice 111 includes a wafer holding device configured to hold the waferW. Further, the substrate transfer device 111 is configured to bemovable in the horizontal direction and the vertical direction androtatable about a vertical axis. This substrate transfer device 111serves to transfer the wafer W between the carrier C and the processingstation 6 by using the wafer holding device.

To elaborate, the substrate transfer device 111 is configured to takeout a wafer W from the carrier C mounted on the mounting unit 10 andload the wafer W into a dry etching unit 12 of the processing station 6to be described later. Further, the substrate transfer device 111 isalso configured to take out the wafer W from a first liquid processingunit 14 of the processing station 6 to be described later and return thewafer W back into the carrier C on the mounting unit 10.

The processing station 6 is provided adjacent to the transfer unit 11.The processing station 6 includes the dry etching unit 12, a load lockchamber 13 and the first liquid processing unit 14.

The dry etching unit 12 corresponds to an example pre-treatment unit andis configured to perform a dry etching process on the wafer W loadedtherein by the substrate transfer device 111. Through this dry etchingprocess, the via hole 106 is formed, and the Cu wiring 102 (see FIG. 1A)within the wafer W is exposed.

Further, the dry etching process is performed in a depressurized state.Moreover, in the dry etching unit 12, an ashing process of removingunnecessary resist can also be performed after the dry etching process.

The load lock chamber 13 may switch an internal pressure thereof betweenan atmospheric pressure and a depressurized pressure. A non-illustratedsubstrate transfer device is provided within the load lock chamber 13.Upon the completion of the process in the dry etching unit 12, theprocessed wafer W is unloaded from the dry etching unit 12 by thenon-illustrated substrate transfer device of the load lock chamber 13,and then, is loaded into the first liquid processing unit 14.

To elaborate, the inside of the load lock chamber 13 is maintained inthe depressurized state until the wafer W is unloaded from the dryetching unit 12. Then, after the unloading of the wafer W is completed,an inert gas such as nitrogen or argon is supplied into the load lockchamber 13 and the inside of the load lock chamber 13 is switched intothe atmospheric pressure state. Under this atmospheric pressure state,the wafer W is loaded into the first liquid processing unit 14.

Accordingly, since the wafer W is blocked from the exterior air until itis loaded into the first liquid processing unit 14 after unloaded fromthe dry etching unit 12, the exposed Cu wiring 102 may be suppressedfrom being oxidized.

Subsequently, the first liquid processing unit 14 performs a filmforming liquid supplying process of supplying the topcoat liquid ontothe wafer W. As stated above, the topcoat liquid supplied on the wafer Wundergoes volume shrinkage to be solidified or cured into the topcoatfilm. As a result, the exposed Cu wiring 102 is covered with the topcoatfilm.

Upon the completion of the film forming liquid supplying process, theprocessed wafer W is accommodated into the carrier C by the substratetransfer device 111, and then, is transferred into the second processingapparatus 3.

<Configuration of Second Processing Apparatus>

Now, a configuration of the second processing apparatus 3 will beexplained with reference to FIG. 4. FIG. 4 is a diagram depicting aschematic configuration of the second processing apparatus.

As shown in FIG. 4, the second processing apparatus 3 includes aloading/unloading station 7 and a processing station 8. Theloading/unloading station 7 and the processing station 8 are providedadjacent to each other.

The loading/unloading station 7 includes a mounting unit 16 and atransfer unit 17. The mounting unit 16 is configured to mount thereon amultiple number of carriers C.

The transfer unit 17 is located adjacent to the mounting unit 16 andincludes therein a substrate transfer device 171 and a transit unit 172.The substrate transfer device 171 includes a wafer holding deviceconfigured to hold thereon the wafer W. Further, the substrate transferdevice 171 is configured to be movable in a horizontal direction and avertical direction and rotatable about a vertical axis. This substratetransfer device 171 serves to transfer the wafer W between the carrier Cand the transit unit 172 by using the wafer holding device.

The processing station 8 is provided adjacent to the transfer unit 17.The processing station 8 includes a transfer unit 18 and multiple secondliquid processing units 19. The multiple liquid processing units 19 arearranged at both sides of the transfer unit 18 side by side.

The transfer unit 18 includes therein a substrate transfer device 181.The substrate transfer device 181 has a wafer holding device configuredto hold the wafer W. Further, the substrate transfer device 181 isconfigured to be movable in a horizontal direction and a verticaldirection and rotatable about a vertical axis. This substrate transferdevice 181 serves to transfer the wafer W between the transit unit 172and the second liquid processing unit 19 by using the wafer holdingdevice.

In the second processing apparatus 3, the substrate transfer device 171of the loading/unloading station 7 is configured to take out, from thecarrier C, the wafer W processed by the first processing apparatus 2,and then, is configured to mount the wafer W on the transit unit 172.The wafer W mounted on the transit unit 172 is unloaded from the transitunit 172 by the substrate transfer device 181 of the processing station8, and then, is loaded into the second liquid processing unit 19.

In the second liquid processing unit 19, a process of removing thetopcoat film by supplying the alkali developer onto the wafer W isperformed. In this process, as the topcoat film is peeled off, thereaction product P left on the wafer W is also removed. Further, in thissecond liquid processing unit 19, the wafer W from which the topcoatfilm is removed is cleaned by a chemical liquid. Here, a DHF (DiluteHydroFluoric acid) is used as the chemical liquid.

Subsequently, the wafer W is unloaded from the second liquid processingunit 19 by the substrate transfer device 181, and then, mounted on thesubstrate transit unit 172. Then, the processed wafer W mounted on thetransit unit 172 is returned back to the carrier C of the mounting unit16 by the substrate transfer device 171.

<Configuration of Dry Etching Unit>

Now, a configuration of each unit included in the first processingapparatus 2 and the second processing apparatus 3 will be explained.First, a configuration of the dry etching unit 12 of the firstprocessing apparatus 2 will be described with reference to FIG. 5. FIG.5 is a schematic diagram illustrating an example configuration of thedry etching unit 12.

As depicted in FIG. 5, the dry etching unit 12 includes a hermeticallysealed chamber 201 configured to accommodate therein a wafer W, and amounting table 202 configured to mount thereon the wafer W in ahorizontal posture is provided within the chamber 201. The mountingtable 202 includes a temperature control device 203 configured tocontrol a temperature of the wafer W to a preset value by cooling orheating the wafer W. A loading/unloading opening (not shown) throughwhich the wafer W is loaded and unloaded into and from the load lockchamber 13 is formed at a sidewall of the chamber 201.

A shower head 204 is provided at a ceiling of the chamber 201, and a gassupply line 205 is connected to the shower head 204. The gas supply line205 is connected to an etching gas supply source 207 via a valve 206,and a preset etching gas is supplied to the shower head 204 from theetching gas supply source 207. The shower head 204 is configured tointroduce the etching gas supplied from the etching gas supply source207 into the chamber 201.

The etching gas supplied from the etching gas supply source 207 may be,but not limited to, a CH₃F gas, a CH₂F₂ gas, a CF₄ gas, an O₂ gas, an Argas, or the like.

A gas exhaust device 209 is connected to a bottom of the chamber 201 viaa gas exhaust line 208. The inside of the chamber 201 is maintained at adepressurized pressure by the gas exhaust device 209.

The dry etching unit 12 is configured as described above. Whiledepressurizing the inside of the chamber 201 by using the gas exhaustdevice 209, the etching gas is supplied into the chamber 201 from theshower head 204, so that the wafer W mounted on the mounting table 202is dry-etched. As a result, the via hole 106 (see FIG. 1A) is formed inthe wafer W, and the Cu wiring 102 is exposed.

In the dry etching unit 12, after dry-etching the interlayer insulatingfilm 104 (see FIG. 1A) by using, for example, a resist film as a mask,an ashing process of removing the resist film may also be performed.

<Configuration of First Liquid Processing Unit>

Now, the first liquid processing unit 14 of the first processingapparatus 2 will be explained with reference to FIG. 6. FIG. 6 is aschematic diagram illustrating an example configuration of the firstliquid processing unit 14.

As depicted in FIG. 6, the first liquid processing unit 14 includes achamber 20, a substrate holding device 30, liquid supply units 40_1 and40_2, and a collecting cup 50.

The chamber 20 is configured to accommodate therein the substrateholding device 30, the liquid supply unites 40_1 and 40_2 and thecollecting cup 50. A FFU (Fan Filter Unit) 21 is provided at a ceilingof the chamber 20. The FFU 21 generates a downflow in the chamber 20.

The FFU 21 is connected to an inert gas supply source 23 via a valve 22.The FFU 21 is configured to discharge an inert gas such as an N₂ gassupplied from the inert gas supply source 23 into the chamber 20. Inthis way, by using the inert gas as a downflow gas, the exposed Cuwiring 102 (see FIG. 1A) can be suppressed from being oxidized.

The substrate holding device 30 includes a rotating/holding unit 31configured to hold a wafer W while rotating the wafer W; and a fluidsupply unit 32 which is inserted through a hollow portion 314 of therotating/holding unit 31 and is configured to supply a gas toward a rearsurface of the wafer W.

The rotating/holding unit 31 is provided at a substantially centralportion of the chamber 20. A holding member 311 configured to hold thewafer W from a lateral side thereof is provided on a top surface of therotating/holding unit 31. The wafer W is horizontally held by theholding member 311 while slightly spaced apart from the top surface ofthe rotating/holding unit 311.

Further, the rotating/holding unit 31 also includes a driving device 312having, for example, a motor and a belt that delivers a rotary power ofthe motor to the rotating/holding unit 31. The rotating/holding unit 31is rotated about a vertical axis by operating the driving device 312. Asthe rotating/holding device 31 is rotated, the wafer W held on therotating/holding unit 31 is also rotated as one body with therotating/holding unit 31. Further, the rotating/holding unit 31 isrotatably supported at the chamber 20 and the collecting cup 50 via abearing 313.

The fluid supply unit 32 is inserted through the hollow portion 314 in acentral portion of the rotating/holding unit 31. A flow path 321 isformed within the fluid supply unit 32, and an N₂ supply source 34 isconnected to the flow path 321 via a valve 33. The fluid supply unit 32supplies an N₂ gas from the N₂ gas supply source 34 to the rear surfaceof the wafer W through the valve 33 and the flow path 321.

The N₂ gas supplied via the valve 33 has a high temperature (e.g., about90° C.) and is used in a volatilization accelerating process to bedescribed later.

When receiving the wafer W from the non-illustrated substrate transferdevice of the load lock chamber 13, the fluid supply unit 32 is raisedby a non-illustrated elevating device, and the substrate holding device30 mounts the wafer W on non-illustrated supporting pins provided on atop surface of the fluid supply unit 32. Thereafter, the substrateholding device 30 lowers the fluid supply unit 32 to a preset positionto deliver the wafer W onto the holding member 311 of therotating/holding unit 31. Further, when transferring the processed waferW to the substrate transfer device 111, the substrate holding unit 30raises the fluid supply unit 32 by using the non-illustrated elevatingdevice and mounts the processed wafer W held by the holding member 311on the non-illustrated supporting pins. Then, the substrate holdingdevice 30 delivers the wafer W mounted on the non-illustrated supportingpins onto the substrate transfer device 111.

The liquid supply unit 40_1 includes nozzles 41 a to 41 c, an arm 42 anda rotating/elevating device 43.

A DHF supply source 45 a is connected to the nozzle 41 a via a valve 44a; a DIW supply source 45 b is connected to the nozzle 41 b via a valve44 b; and an IPA supply source 45 c is connected to the nozzle 41 c viaa valve 44 c. A DHF supplied from the nozzle 41 a is a dilutehydrofluoric acid which is diluted to a preset concentration that doesnot cause corrosion of the Cu wiring 102. Further, the arm 42 isconfigured to support the nozzles 41 a to 41 c horizontally, and therotating/elevating device 43 is configured to rotate and move the arm 42up and down.

The liquid supply unit 40_1 is configured to supply, onto the wafer W, apreset chemical liquid (here, DHF) from the nozzle 41 a, DIW (purewater) as a kind of rinse liquid from the nozzle 41 b, and IPA(isopropyl alcohol) as a kind of drying solvent from the nozzle 41 c.

Further, the liquid supply unit 40_2 includes nozzles 41 d and 41 e, anarm 42 configured to support the nozzles 41 d and 41 e horizontally; anda rotating/elevating device 43 configured to rotate and move the arm 42up and down. A MIBC supply source 45 d is connected to the nozzle 41 dvia a valve 44 d, and a topcoat liquid supply source 45 e is connectedto the nozzle 41 e via a valve 44 e.

The liquid supply unit 40_2 is configured to supply MIBC(4-methyl-2-pentanol) as a solvent having affinity with the topcoatliquid onto the wafer W from the nozzle 41 d, and supply the topcoatliquid onto the wafer W from the nozzle 41 e.

The MIBC is also contained in the topcoat liquid and has affinity withthe topcoat liquid. Besides the MIBC, PGME (propylene glycol monomethylether), PGMEA (Propylene glycol monomethyl ether acetate), or the likemay be used as the solvent having affinity with the topcoat liquid.

Further, although the dedicated nozzles 41 a to 41 e are provided forthe respective processing liquids in this example embodiment, a singlenozzle may be shared for the multiple the processing liquids. If thenozzle is shared, however, a processing liquid remaining in the nozzleor a pipeline needs to be first discharged out in a case where theprocessing liquids are required not to be mixed, for example.Accordingly, the corresponding processing liquid may be consumedunnecessarily. In contrast, by providing the dedicated nozzles 41 a to41 e, such a process of discharging the processing liquid need not beperformed, so that waste of the processing liquid can be avoided.

The collecting cup 50 is provided to surround the rotating/holding unit31 and is configured to collect a processing liquid dispersed from thewafer W by the rotation of the rotating/holding unit 31. A liquid drainopening 51 is formed at a bottom of the collecting cup 50, and theprocessing liquid collected by the collecting cup 50 is drained out fromthe liquid drain opening 51 to an outside of the first liquid processingunit 14. Further, a gas exhaust opening 52, through which the N₂ gassupplied from the fluid supply unit 32 or the inert gas supplied fromthe FFU 21 is exhausted to the outside of the first liquid processingunit 14, is also formed at the bottom of the collecting cup 50.

<Configuration of Second Liquid Processing Unit>

Now, a configuration of the second liquid processing unit 19 included inthe second processing apparatus 3 will be described with reference toFIG. 7. FIG. 7 is a schematic diagram depicting an example configurationof the second liquid processing unit 19.

As depicted in FIG. 7, the second liquid processing unit 19 includes,within a chamber 60, a substrate holding device 70, a liquid supply unit80 and a collecting cup 90.

The substrate holding device 70 has a rotating/holding unit 71, asupporting column 72 and a driving unit 73. The rotating/holding unit 71is provided at a substantially central portion of the chamber 60. Aholding member 711 configured to hold a wafer W from a lateral sidethereof is provided on a top surface of the rotating/holding unit 71.The wafer W is horizontally held by the holding member 711 whileslightly spaced apart from the top surface of the rotating/holding unit71. The supporting column 72 is a vertically extended member. A base endof the supporting column 72 is rotatably supported by the driving unit73, and a leading end of the supporting column 72 is configured tohorizontally support the rotating/holding unit 71. The driving unit 73is configured to rotate the supporting column 72 about a vertical axis.

The substrate holding device 70 configured as described above rotatesthe rotating/holding unit 71, which is supported on the supportingcolumn 72, by rotating the supporting column 72 through the driving unit73, so that the wafer W held on the rotating/holding unit 71 is alsorotated.

The liquid supply unit 80 includes nozzles 81 a to 81 c, an arm 82 and arotating/elevating device 83.

The nozzle 81 a is connected to a DHF supply source 85 a via a valve 84a, the nozzle 81 b is connected to an alkali developer supply source 85b via a valve 84 b, and the nozzle 81 c is connected to a DIW supplysource 85 c via a valve 84 c. The arm 82 is configured to horizontallysupport the nozzles 81 a to 81 c. The rotating/elevating device 83 isconfigured to rotate and move the arm 82 up and down.

The liquid supply unit 80 is configured to supply, onto the wafer W, aDHF as a preset chemical liquid from the nozzle 81 a, the alkalideveloper as the removing liquid for removing the topcoat film from thenozzle 81 b, and the DIW as the rinse liquid from the nozzle 81 c.

The alkali developer supplied from the nozzle 81 b contains ananticorrosive material that suppresses corrosion of the Cu wiring 102.Accordingly, it is possible to remove the topcoat film while suppressingdamage on the Cu wiring 102 in a removing liquid supplying process to bedescribed later. Further, the DHF supplied from the nozzle 81 a isdiluted to a preset concentration that does not incur corrosion of theCu wiring 102.

The collecting cup 90 is placed to surround the rotating/holding unit 71to suppress the processing liquids from being dispersed. A liquid drainopening 91 is formed at a bottom of the collecting cup 90, and theprocessing liquids collected by the collecting cup 90 are drained out ofthe second liquid processing unit 19 from the liquid drain opening 91.

As described above, the second liquid processing unit 19 in accordancewith the first example embodiment corresponds to a removing unitconfigured to remove the topcoat film from the wafer W and, also, anexample post-treatment unit configured to perform a presetpost-treatment on the wafer W from which the topcoat film has beenremoved.

<Operations of Substrate Processing System>

Now, specific operations of the substrate processing system 1 will bediscussed with reference to FIG. 8. FIG. 8 is a flowchart showing aprocess sequence of processing the substrate in accordance with thefirst example embodiment. Respective processes shown in FIG. 8 areperformed under the control of the first control device 4A or the secondcontrol device 4B.

In the substrate processing system 1 in accordance with the firstexample embodiment, processes from a dry etching process (block S101) toa first unloading process (block S107) shown in FIG. 8 are performed inthe first processing apparatus 2, and processes from a removing liquidsupplying process (block S108) to a second unloading process (blockS110) are performed in the second processing apparatus 3.

As shown in FIG. 8, at block S101 (Dry Etching Process), the dry etchingprocess is performed in the dry etching unit. In this dry etchingprocess, the dry etching unit 12 performs a dry etching or ashing on awafer W. As a result, a Cu wiring 102 formed within the wafer W isexposed (see FIG. 1A).

Then, the wafer W is loaded into the first liquid processing unit 14.Since this loading process is performed through the load lock chamber13, the exposed Cu wiring 102 can be suppressed from being oxidized.Processing may proceed from block S101 to block S102.

Subsequently, at block S102 (Chemical Liquid Process), a chemical liquidprocess is performed in the first liquid processing unit 14. In thischemical liquid process, the nozzle 41 a of the liquid supply unit 40_1(see FIG. 6) is positioned above a central portion of the wafer W, and aDHF is supplied onto the wafer W from the nozzle 41 a. The DHF suppliedto the wafer W is diffused on a main surface of the wafer W by acentrifugal force generated by rotation of the wafer W.

Accordingly, a surface of a reaction product P or the Cu wiring 102 isslightly dissolved by the DHF, and an adhesive strength of the reactionproduct P is weakened. Thus, the reaction product P becomes easilyremovable.

Here, the chemical liquid process of block S102 is performed to easilyremove the reaction product P, and is performed under a low etchingcondition where the reaction product P may not be completely removed.Here, the term “low etching condition” means a condition for performingetching with, for example, an etching time shorter than an etching timerequired to completely remove the reaction product P, or a DHFconcentration lower than a DHF concentration required to completelyremove the reaction product P.

Thus, as compared to the conventional case of removing the reactionproduct P only with the DHF, it is possible to remove the reactionproduct P more effectively while suppressing the Cu wiring 102 frombeing damaged. Further, since the DHF supplied from the nozzle 41 a inthe first example embodiment is diluted to a preset concentration thatdoes not incur corrosion of the Cu wiring 102, damage on the Cu wiring102 may be more securely suppressed.

A reaction product P having a relatively smaller particle size may beeasily removed in the chemical liquid process, whereas a reactionproduct P having a relatively larger particle size may be easily removedin a removing process using a topcoat liquid and an alkali removingliquid to be described later. Accordingly, through the combination ofthese two types of processes, it is possible to remove the reactionproduct P more effectively.

The chemical liquid supplied from the nozzle 41 a may not be limited tothe DHF. By way of non-limiting example, ammonium fluoride, hydrochloricacid, sulfuric acid, hydrogen peroxide water, phosphoric acid, aceticacid, nitric acid, ammonium hydroxide, organic acid, an aqueous liquidcontaining ammonium fluoride, or the like may be used as the chemicalliquid. Processing may proceed from block S102 to block S103.

Subsequently, in the first liquid processing unit 14, at block S103(Rinsing Process), a rinsing process of cleaning the main surface of thewafer W with DIW is performed. In this rinsing process, the nozzle 41 b(see FIG. 6) is positioned above the central portion of the wafer W.Thereafter, the valve 44 b is opened for a preset time, so that the DIWis supplied from the nozzle 41 b onto the main surface of the wafer Wbeing rotated, and the DHF remaining on the wafer W is washed away.Processing may proceed from block S103 to block S104.

Thereafter, at block S104 (Substitution Process), a substitution processis performed in the first liquid processing unit 14. In thissubstitution process, the nozzle 41 c (see FIG. 6) is positioned abovethe central portion of the wafer W. Then, the valve 44 c is opened for apreset time, so that IPA is supplied from the nozzle 41 c onto the mainsurface of the wafer W being rotated, and the DIW on the wafer W issubstituted with the IPA. Then, the rotation of the wafer W is stoppedwhile the IPA remains on the wafer W. Upon the completion of thesubstitution process, the liquid supply unit 40_1 is moved to theoutside of the wafer W. The processes from blocks S102 to S104 may notnecessarily be performed. Processing may proceed from block S104 toblock S105.

Subsequently, at block S105 (Solvent Supplying Process), a solventsupplying process is performed in the first liquid processing unit 14.The solvent supplying process is a process of supplying MIBC havingaffinity with the topcoat liquid onto the wafer W before supplying thetopcoat liquid as a film forming liquid onto the wafer W.

To elaborate, the nozzle 41 d of the liquid supply unit 40_2 ispositioned above the central portion of the wafer W. Then, the MIBC issupplied onto the wafer W from the nozzle 41 d. The MIBC supplied on thewafer W is diffused on the main surface of the wafer W by thecentrifugal force generated by the rotation of the wafer W.

In this way, by diffusing the MIBC having affinity with the topcoatliquid on the wafer W in advance, the topcoat liquid may be easilydiffused on the wafer W and easily enter the via hole 106 in asubsequent film forming liquid supplying process to be described later.Accordingly, a consumption amount of the topcoat liquid can bedecreased, and the reaction product P within the via hole 106 can bemore securely removed.

The MIBC has high affinity with the topcoat liquid, whereas the MIBC ishardly mixed with DIW and has low affinity with the DIW. Thus, in thefirst liquid processing unit 14, prior to supplying the MIBC, the DIW issubstituted with the IPA having higher affinity with the MIBC than theDIW. Accordingly, as compared to a case of performing the solventsupplying process (block S105) immediately after the rinsing process(block S103), the MIBC is allowed to be more easily diffused on the mainsurface of the wafer W. Therefore, a consumption amount of the MIBC canbe decreased.

Further, in case that a solvent having affinity with the film formingliquid has affinity with the DIW as well, the substitution process ofblock S104 may be omitted.

As stated above, it is desirable to perform the above-described solventsupplying process, for example, to diffuse the topcoat liquid on the topsurface of the wafer W efficiently for a short time period. Further, ifthe film forming liquid has affinity with the IPA, the solvent supplyingprocess of block S105 may be omitted. Processing may proceed from blockS105 to block S106.

Thereafter, at block S106 (Film Forming Liquid Supplying Process), thefilm forming liquid supplying process is performed in the first liquidprocessing unit 14. In this film forming liquid supplying process, thenozzle 41 e of the liquid supply unit 40_2 is positioned above thecentral portion of the wafer W. Then, the topcoat liquid as a filmforming liquid is supplied from the nozzle 41 e onto the main surface ofthe wafer W, which serves as a surface on which a circuit is formed andno resist film is formed.

The topcoat liquid supplied on the wafer W is diffused on the mainsurface of the wafer W by the centrifugal force generated by therotation of the wafer W. As a result, a liquid film of the topcoatliquid is formed on the entire main surface of the wafer W (see FIG.1B). At this time, the wettability of the main surface of the wafer Whas been increased by supplying the MIBC on the wafer W at block S105.Thus, the topcoat liquid can be easily diffused on the main surface ofthe wafer W, and can enter the via hole 106 more easily. Therefore, theconsumption amount of the topcoat liquid can be reduced, and aprocessing time can also be shortened.

As a volatile component is volatilized when the wafer W is rotated, thetopcoat liquid is solidified or cured. As a result, a topcoat film isformed on the entire main surface of the wafer W.

Further, a volatilization accelerating process is performed in the firstliquid processing unit 14. This volatilization accelerating process is aprocess of accelerating the volatilization of the volatile componentcontained in the topcoat liquid for forming the film on the entire mainsurface of the wafer W. To be specific, by opening the valve 33 (seeFIG. 6) for a preset time, a high-temperature N₂ gas is supplied fromthe fluid supply unit 32 to the rear surface of the wafer W beingrotated. As a consequence, the topcoat liquid is heated along with thewafer W, so that the volatilization of the volatile component can beaccelerated.

Alternatively, the volatilization accelerating process may be a processof depressurizing the inside of the chamber 20 by a non-illustrateddepressurizing device or a process of decreasing humidity within thechamber 20 by a gas supplied from the FFU 21. The volatilization of thevolatile component can also be accelerated through these processes.

Here, though the present example embodiment is described for the case ofperforming the volatilization accelerating process in the first liquidprocessing unit 14, the volatilization accelerating process may beomitted. That is, the wafer W may be left in the first liquid processingunit 14 until the topcoat liquid is naturally solidified or cured.Further, by rotating the wafer W at a rotational speed that does notmake the topcoat liquid dispersed off the wafer W and does not exposethe main surface of the wafer W or does not stop the rotating of thewafer W, the volatilization of the topcoat liquid may be accelerated.Processing may proceed from block S106 to block S107.

Subsequently, at block S107 (First Unloading Process), a first unloadingprocess is performed in the first liquid processing unit 14. In thisfirst unloading process, the substrate transfer device 111 takes out thewafer W from the first liquid processing unit 14, and then, transfersthe wafer W onto the mounting unit 10 to accommodate the wafer W in thecarrier C mounted on the mounting unit 10.

At this time, the exposed Cu wiring 102 of the wafer W is covered withthe topcoat liquid in a short time period after the dry etching (seeFIG. 1C). That is, since the Cu wiring 102 is blocked from the exteriorair, an adverse effect on the wafer W, such as oxidation thereof, may beavoided.

Accordingly, in the substrate processing system 1 of the first exampleembodiment, since time management for keeping the Q-time from the end ofthe dry etching to the cleaning process becomes unnecessary,productivity can be improved.

The wafer W accommodated in the carrier C is transferred from the firstprocessing apparatus 2 to the mounting unit 16 of the second processingapparatus 3. Thereafter, the wafer W is taken out of the carrier C bythe substrate transfer device 171 (see FIG. 4) of the second processingapparatus 3, and then, loaded into the second liquid processing unit 19via the transit unit 172 and the substrate transfer device 181.Processing may proceed from block S107 to block S108.

In the second liquid processing unit 19, at block S108 (Removing LiquidSupplying Process), a removing liquid supplying process is performedfirst. In the removing liquid supplying process, the nozzle 81 b (seeFIG. 7) is positioned above the central portion of the wafer W. Then,the valve 84 b is opened for a preset time, and the alkali developer asa removing liquid is supplied from the nozzle 81 b onto the wafer Wbeing rotated. As a result, the topcoat film formed on the wafer W ispeeled off and dissolved to be removed from the wafer W.

At this time, the reaction product P remaining on the wafer W is peeledoff and removed from the wafer W. At the moment, since zeta potentialshaving the same polarity are generated on the wafer W and the reactionproduct P, the wafer W and the reaction product P are repelled againsteach other. Thus, re-attachment of the reaction product P to the wafer Wor the like can be suppressed.

Further, the alkali developer contains an anticorrosive material thatsuppresses corrosion of the Cu wiring 102. Accordingly, corrosion of theCu wiring 102 can be suppressed even when the alkali developer issupplied on the Cu wiring 102. Thus, in accordance with the substrateprocessing system 1 of the first example embodiment, it is possible toremove the topcoat film while suppressing the Cu wiring 102 from beingdamaged. Processing may proceed from block S108 to block S109.

Subsequently, at block S109 (Chemical Liquid Process), a chemical liquidprocess is performed in the second liquid processing unit 19. In thischemical liquid process, the nozzle 81 a (see FIG. 7) is positioned atthe central portion of the wafer W, and the DHF is supplied onto thewafer W from the nozzle 81 a. The DHF supplied on the wafer W isdiffused on the main surface of the wafer W by the centrifugal forcegenerated by the rotation of the wafer W.

In this way, by performing the chemical liquid process after theremoving liquid supplying process, i.e., after removing the topcoatfilm, it is possible to remove the reaction product P (especially, areaction product P having a relatively smaller particle size), if any,which may still remain on the wafer W without being removed when thetopcoat film is peeled off. Even in such a case, it is possible toremove the reaction product P more effectively while suppressing damageon the wafer W, as compared to a general chemical liquid cleaningprocess. Further, if the reaction product P is removed sufficiently bythe removing liquid supplying process, the chemical liquid process ofblock S109, i.e., the wet cleaning process may be omitted.

Upon the completion of the chemical liquid process, there is performed arinsing process of cleaning the main surface of the wafer W by supplyingthe DIW onto the wafer W from the nozzle 81 c in the second liquidprocessing unit 19. Through this rinsing process, the dissolved topcoatfilm or the reaction product P floating in the alkali developer arewashed away by the DIW from the wafer W. After the rinsing process, inthe second liquid processing unit 19, there is performed a dryingprocess of drying the wafer W by increasing the rotational speed of thewafer W for a preset time period to disperse the DIW remaining on themain surface of the wafer W. Thereafter, the rotation of the wafer W isstopped. Processing may proceed from block S109 to block S110.

Then, at block S110 (Second Unloading Process), a second unloadingprocess is performed in the second liquid processing unit 19. In thissecond unloading process, the wafer W is unloaded from the second liquidprocessing unit 19 by the substrate transfer device 181 (see FIG. 4),and then, accommodated in the carrier C mounted on the mounting unit 16via the transit unit 172 and the substrate transfer device 171. Upon thecompletion of the second unloading process, a series of substrateprocesses on the single sheet of wafer W is finished.

As described above, the substrate processing system 1 in accordance withthe first example embodiment includes the mounting unit 10, the liquidsupply unit 40_2 (corresponding to the example processing liquid supplyunit), and the substrate transfer device 111. The mounting unit 10 isconfigured to mount thereon carriers C each of which is capable ofaccommodating therein a multiple number of wafers W. The liquid supplyunit 40_2 is configured to supply the topcoat liquid, which contains avolatile component and is used as a processing liquid for forming a filmon the wafer W, after performing the dry etching or ashing on the waferW in which a Cu wiring 102 is formed and at least a part thereof isexposed. The substrate transfer device 111 transfers, to the mountingunit 10, the wafer W having thereon the topcoat liquid solidified orcured as a result of the volatilization of the volatile component, andthen accommodates the wafer W in the carrier C mounted on the mountingunit 10.

Accordingly, in accordance with the substrate processing system 1 of thefirst example embodiment, the Q-time from the exposure of the Cu wiring102 to the cleaning process is easily managed, so that productivity maybe improved.

Second Example Embodiment

Meanwhile, in a semiconductor manufacturing process, a rear surfaceprocess such as cleaning on a rear surface of a wafer W may beperformed. In such a case, however, there is a concern that a cleaningliquid used in the rear surface process may be dispersed to orinfiltrated into a main surface of the wafer W, so that the main surfaceof the wafer W is contaminated.

Accordingly, by forming a topcoat film on the main surface of the waferW and then performing the rear surface process of the wafer W in thestate that the main surface of the wafer W is protected by the topcoatfilm, the contamination of the main surface of the wafer W may besuppressed.

This process will be described below with reference to FIG. 9A and FIG.9B. FIG. 9B and FIG. 9B illustrate an example rear surface cleaningprocess.

As illustrated in FIG. 9A, a fluid supply unit 32 included in a firstliquid processing unit 14A is connected to an N₂ supply source 34 via avalve 33 and also connected to a SC1 supply source 36 via a valve 35.The fluid supply unit 32 is configured to supply an N₂ gas introducedfrom the N₂ supply source 34 to the rear surface of the wafer W and,also, supply SC1 (ammonia hydrogen peroxide water) introduced from theSC1 supply source 36 to the rear surface of the wafer W.

The first liquid processing unit 14A is configured to perform the rearsurface cleaning process depicted in FIG. 9B after the process of blockS106 shown in FIG. 8 is performed, i.e., after a topcoat film is formedon the entire main surface of the wafer W.

In the rear surface cleaning process, the valve 35 is opened for apreset time, and the SC1 is supplied from the fluid supply unit 32 tothe rear surface of the wafer W being rotated. As a result, the rearsurface of the wafer W is cleaned.

As described, in this second example embodiment, the rear surface of thewafer W is cleaned in the state that the entire main surface of thewafer W is covered with the topcoat film. Accordingly, even if thecleaning liquid is dispersed during the rear surface cleaning process,the dispersed cleaning liquid may be suppressed from adhering to themain surface of the wafer W, so that the contamination of the mainsurface of the wafer W can be suppressed. Furthermore, contamination ofthe main surface of the wafer W as a result of infiltration of thecleaning liquid may also be suppressed.

Although FIG. 9A and FIG. 9B depict an example case of performing therear surface cleaning process by supplying the cleaning liquid such asSC1 to the rear surface of the wafer W, the rear surface cleaningprocess may not be limited thereto. For example, a scrub cleaning usinga cleaning member such as a brush may be performed as the rear surfacecleaning process.

An example case of performing the scrub cleaning as the rear surfacecleaning process will be described below with reference to FIG. 10. FIG.10 is a diagram illustrating such another example rear surface cleaningprocess.

When performing the scrub cleaning as the rear surface cleaning process,a first liquid processing unit 14B shown in FIG. 10 first carries outprocesses of blocks S101 to S106 shown in FIG. 8.

Subsequently, the wafer W is taken out of the first liquid processingunit 14B by the substrate transfer device 111, and then, transferred toa non-illustrated inverting device. After front and rear surfaces of thewafer W are inverted by the inverting device, the wafer W is loadedagain into the first liquid processing unit 14B by the substratetransfer device 111. By way of example, the inverting device may beprovided in the processing station 6 of the first processing apparatus2. As for the inverting device, any of various known configurations maybe employed.

Subsequently, as illustrated in FIG. 10, the first liquid processingunit 14B holds and rotates the inverted wafer W by a substrate holdingdevice 30 and, then, performs the scrub cleaning on the rear surface ofthe wafer W by using a brush 500. Specifically, by moving the rotatingbrush 500 while maintaining the brush 500 in contact with the rearsurface of the wafer W, the first liquid processing unit 14B removesforeign substances adhering to the wafer W.

At this time, since the entire main surface of the wafer W is coveredwith the topcoat film, the foreign substances removed from the rearsurface of the wafer W may not be attached to the main surface of thewafer W. Here, a fluid such as an N₂ gas from the fluid supply unit 32may be supplied, so that the foreign substances can be suppressed fromadhering to the topcoat film.

Upon the completion of the scrub cleaning, the wafer W is unloaded fromthe first liquid processing unit 14B by the substrate transfer device111, inverted again by the non-illustrated inverting device, and then,accommodated in the carrier C.

Here, although the brush 500 is used, the scrub cleaning may beperformed by using other cleaning members such as a sponge.

In addition, a process of jetting a gas cluster to the rear surface ofthe wafer W to remove particles from the rear surface of the wafer W maybe performed as the rear surface cleaning process. This process will bedescribed below with reference to FIG. 11. FIG. 11 illustrates such astill another example rear surface cleaning process.

As illustrated in FIG. 11, a first liquid processing unit 14C includes anozzle 600. The nozzle 600 is configured to jet carbon dioxide as acleaning gas at a high pressure and configured to generate a gascluster, which is an aggregate of atoms or molecules of the cleaninggas, by adiabatic expansion.

The nozzle 600 includes a pressure chamber 601 formed in, for example, asubstantially cylindrical shape of which bottom portion is opened. Thebottom portion of the pressure chamber 601 is formed to have an orifice602. A gas diffuser 603 of which diameter increases downward isconnected to the orifice 602. At the orifice 602, an opening diameteris, e.g., about 0.1 mm.

One end of a gas supply path 604 is connected to a top portion of thepressure chamber 601, and a carbon dioxide supply source 606 isconnected to the other end of the gas supply path 604 via a pressurecontrol valve 605.

The first liquid processing unit 14C is configured to invert the wafer Whaving the topcoat film formed thereon and, then, rotate the wafer Wwhile holding the wafer W on the substrate holding device 30 in the sameprocess sequence as that in the case of performing the above-describedscrub cleaning. Further, the first liquid processing unit 14C isconfigured to supply carbon dioxide to the nozzle 600 at a higherpressure than a pressure within the chamber 20 of the first liquidprocessing unit 14C. Once jetted from the nozzle 600 into the chamber20, the carbon dioxide is cooled to be a temperature equal to or lowerthan a condensation temperature by rapid adiabatic expansion, andmolecules M1 thereof are agglomerated together into gas clusters M2,which are the aggregates, by a van der Waals force.

The gas clusters M2 are vertically jetted toward the rear surface of thewafer W, and may blow away and remove foreign substances attached on therear surface of the wafer W. Here, the entire main surface of the waferW is covered with the topcoat film. Accordingly, the foreign substancesremoved from the rear surface of the wafer W may be suppressed fromadhering to the main surface of the wafer W.

After the cleaning by the gas clusters M2 is completed, the wafer W isunloaded from the first liquid processing unit 14C by the substratetransfer device 111, inverted once again by the non-illustratedinverting device, and, then, accommodated in the carrier C.

Alternatively, the rear surface cleaning process may be implemented by atwo-fluid cleaning process using a two-fluid nozzle configured to jet acleaning liquid to the rear surface of the wafer W in a mist form by agas, an ultrasonic cleaning process using an ultrasonic oscillator, orthe like.

In addition, the process performed in the state that the main surface ofthe wafer W is covered with the topcoat film may not be limited to therear surface cleaning process, and may be, by way of example, an etchingprocess of etching a rear surface or a bevel of the wafer W by using achemical liquid. Here, the etching process may be a process of removingan oxide film by using, for example, hydrofluoric acid (HF) or the like.Since the etching process is performed in the state that the mainsurface of the wafer W is covered with the topcoat film, the mainsurface of the wafer W may not be etched by being protected by thetopcoat film even if the chemical liquid infiltrates from the rearsurface of the wafer W toward the main surface thereof. As described,since an area to be etched is determined by the topcoat film, theetching process can be performed with high accuracy.

In addition, the process performed in the state that the main surface ofthe wafer W is covered with the topcoat film may also be a polishingprocess of polishing the rear surface or the bevel of the wafer W byusing a polishing brush.

As stated above, by processing the other surface of the wafer W in thestate that the main surface of the wafer W is covered with the topcoatfilm, the other surface of the wafer W can be processed whilesuppressing the main surface of the wafer W from being contaminated.

The above second example embodiment has been described for the casewhere each of the first liquid processing units 14A to 14C correspondsto an example other surface processing unit. That is, the second exampleembodiment has been described for the case where the first liquidprocessing units 14A to 14C perform the rear surface cleaning process aswell as a film forming liquid supplying process. However, the firstprocessing apparatus 2 may additionally include a rear surface cleaningunit configured to perform the rear surface cleaning process, separatelyfrom the first liquid processing unit 14.

In addition, the other surface process such as the rear surface cleaningprocess may be performed in the second processing apparatus 3. In thiscase, a nozzle or a brush for the rear surface cleaning may be providedin the second liquid processing unit 19, or a rear surface processingunit, which is separate from the second liquid processing unit 19, maybe additionally provided in the second processing apparatus 3.

Third Example Embodiment

Further, the configurations for performing the film forming liquidsupplying process or the removing liquid supplying process may beadditionally provided in a conventional pre-treatment or post-treatmentapparatus which does not have these configurations. In a third exampleembodiment, such a configuration will be described. FIG. 12 is a diagramdepicting a schematic configuration of a first processing apparatus inaccordance with the third example embodiment.

As illustrated in FIG. 12, the first processing apparatus 2A includes afirst block 2A1, a second block 2A2, and a connecting unit 2A3.

The first block 2A1 includes a loading/unloading station 5 and aprocessing station 6. Since the loading/unloading station 5 is the sameas the aforementioned loading/unloading station 5 of the firstprocessing apparatus 2 in accordance with the first example embodiment,specific elaboration thereof is omitted herein.

A multiple number of dry etching units 12 are arranged in the processingstation 6 of the first block 2A1. In addition, unlike the processingstation 6 of the first processing apparatus 2 in the first exampleembodiment, the processing station 6 of the first block 2A1 does notinclude the first liquid processing unit 14.

The second block 2A2 includes a transfer unit 11′ and a multiple numberof first liquid processing units 14. The transfer unit 11′ includes asubstrate transfer device 112, which is the same as the substratetransfer device 111, and performs the loading/unloading of a wafer Winto/from the first liquid processing units 14 by using the substratetransfer device 112.

The connecting unit 2A3 is configured to connect the transfer unit 11 ofthe first block 2A1 and the transfer unit 11′ of the second block 2A2 toeach other. This connecting unit 2A3 has an internal space blocked fromthe atmosphere. The internal space is filled with an inert gas such asan N₂ gas and blocked from the atmosphere. Further, a non-illustratedmounting table is provided in the internal space.

In this first processing apparatus 2A, after a process in a dry etchingunit 12 is finished, the wafer W is taken out of the dry etching unit 12by the substrate transfer device 111, and, then, mounted on thenon-illustrated mounting table of the connecting unit 2A3.

The wafer W mounted on the mounting table is taken out of the mountingtable by the substrate transfer device 112 of the second block 2A2, andthen, transferred into a corresponding first liquid processing unit 14in which the processes of blocks S102 to S106 shown in FIG. 8 areperformed. As a result, a topcoat film is formed on a main surface ofthe wafer W.

Thereafter, the wafer W is taken out of the first liquid processing unit14 by the substrate transfer device 112, transferred from the substratetransfer device 112 to the substrate transfer device 111 via thenon-illustrated mounting table of the connecting unit 2A3, and, then,accommodated in the carrier C mounted on the mounting unit 10 by thesubstrate transfer device 111.

As described, the first liquid processing unit 14 configured to performa film forming liquid supplying process may be provided separately fromthe first block 2A1 including the mounting unit 10, the substratetransfer device 111 and the dry etching unit 12, and the first liquidprocessing unit 14 may be provided in the second block 2A2 connected tothe first block 2A1 via the connecting unit 2A3. That is, the firstliquid processing unit 14 may be additionally provided in theconventional pre-treatment apparatus which does not have the firstliquid processing unit 14.

In this case, by blocking the internal space of the connecting unit 2A3from the atmosphere, the Cu wiring 102 exposed by the dry etching can besuppressed from being oxidized when the wafer W is transferred from thefirst block 2A1 to the second block 2A2 after the dry etching.

In addition, like the internal space of the connecting unit 2A3, theinside of the transfer unit 11 of the first block 2A1 and the inside ofthe transfer unit 11′ of the second block 2A2 may also be filled with anN₂ gas or the like, and thus, blocked from the atmosphere. In thisconfiguration, the exposed Cu wiring 102 can be further suppressed frombeing oxidized.

In addition, in the above-described third example embodiment, thetransfer unit 11 of the first block 2A1 and the transfer unit 11′ of thesecond block 2A2 are connected to each other by the connecting unit 2A3.However, the first processing apparatus 2A may have, for example, aconfiguration in which the dry etching unit 12 of the first block 2A1and the first liquid processing unit 14 of the second block 2A2 areconnected to each other by the connecting unit 2A3. In such aconfiguration, a non-illustrated substrate transfer device may beprovided in the internal space of the connecting unit 2A3, and the waferW may be transferred between the dry etching unit 12 and the firstliquid processing unit 14 by the non-illustrated substrate transferdevice. In addition, in this configuration, the second block 2A2 doesnot need to include the transfer unit 11′.

Now, a modification example of the second processing apparatus will bedescribed with reference to FIG. 13. FIG. 13 is a diagram depicting aschematic configuration of a second processing apparatus in accordancewith the third example embodiment.

As depicted in FIG. 13, the second processing apparatus 3A includes afirst block 3A1, a second block 3A2, and a connecting unit 3A3.

The first block 3A1 includes a loading/unloading station 7 and aprocessing station 8. The loading/unloading station 7 is the same as theloading/unloading station 7 of the second processing apparatus 3 inaccordance with the first example embodiment.

A multiple number of second liquid processing units 19A are arranged inthe processing station 8 of the first block 3A1. Each second liquidprocessing unit 19A has the same configuration as that of each secondliquid processing unit 19 of the first example embodiment excepting thatthe components related to a removing liquid supplying process,specifically, the nozzle 81 b, the valve 84 b and the alkali developersupply source 85 b are omitted in the second liquid processing unit 19A.

The second block 3A2 includes a transfer unit 18′ and a multiple numberof removing units 700. The transfer unit 18′ includes a substratetransfer device 182, which is the same as the substrate transfer device181. Loading/unloading of the wafer W into/from the removing units 700are performed by using the substrate transfer device 182.

The removing units 700 have the configuration excluding the nozzle 81 a,the valve 84 a, the DHF supply source 85 a, the nozzle 81 c, the valve84 c and the DIW supply source 85 c, from the second liquid processingunits 19 in accordance with the first example embodiment.

The connecting unit 3A3 connects the transfer unit 18 of the first block3A1 and the transfer unit 18′ of the second block 3A2 to each other.This connecting unit 3A3 has an internal space blocked from theatmosphere. The internal space is blocked from the atmosphere by beingfilled with an inert gas such as, but not limited to, an N₂ gas. Inaddition, a non-illustrated mounting table is provided in the internalspace.

In this second processing apparatus 3A, the wafer W is transferred fromthe loading/unloading station 7 to the transfer unit 18 of theprocessing station 8, and, then, mounted on the non-illustrated mountingtable of the connecting unit 3A3 by the substrate transfer device 181.

The wafer W mounted on the mounting table is taken out of the mountingtable by the substrate transfer device 182 of the second block 3A2, and,then, transferred to a corresponding removing unit 700 in which theremoving liquid supplying process (block S108 of FIG. 8) is performed.As a result, the topcoat film is removed from the main surface of thewafer W.

Thereafter, the wafer W is taken out of the removing unit 700 by thesubstrate transfer device 182, and, then, transferred from the substratetransfer device 182 to the substrate transfer device 181 via thenon-illustrated mounting table of the connecting unit 3A3. Then, thewafer W is transferred into a corresponding second liquid processingunit 19A by the substrate transfer device 181. After the chemical liquidprocess (block S109 of FIG. 8) is performed by the second liquidprocessing unit 19A, the wafer W is accommodated back into the carrier Cthrough the second unloading process (block S110 of FIG. 8).

As stated above, the removing unit 700 configured to perform theremoving liquid supplying process may be provided separately from thefirst block 3A1 including the mounting unit 16, the substrate transferdevice 181 and the second liquid processing units 19A configured toperform the chemical liquid process. The removing unit 700 may beprovided in the second block 3A2 connected to the first block 3A1 viathe connecting unit 3A3. That is, the removing unit 700 may beadditionally provided in the conventional post-treatment apparatus whichdoes not have the removing unit 700.

In such a configuration, by blocking the internal space of theconnecting unit 3A3 from the atmosphere, the exposed Cu wiring 102 canbe suppressed from being oxidized when transferring the wafer W from thesecond block 3A2 to the first block 3A1 after the removing process. Inaddition, in the second processing apparatus 3A, the inside of thetransfer unit 18 of the first block 3A1 and the inside of the transferunit 18′ of the second block 3A2 may also be blocked from theatmosphere.

In addition, the second block 3A2 may include the same loading/unloadingstation as the loading/unloading station 7. In this configuration, thewafer W having the topcoat film formed thereon is loaded from theloading/unloading station of the second block 3A2 into the inside of thesecond block 3A2, and the topcoat film is removed from the wafer W bythe removing unit 700. Then, the wafer W is transferred into the firstblock 3A1 via the connecting unit 3A3. Thus, transfer efficiency of thewafer W can be improved.

Fourth Example Embodiment

The above example embodiments have been described for an example case ofremoving the topcoat film from the wafer W by supplying the alkalideveloper as a removing liquid to the topcoat film. However, the processof removing the topcoat film from the wafer W may not be limited to theabove-described examples. Hereinafter, another example removing processof removing the topcoat film from the wafer W will be elaborated. FIG.14 is a diagram illustrating a schematic configuration of a secondprocessing apparatus in accordance with a fourth example embodiment.

As illustrated in FIG. 14, a second processing apparatus 3B inaccordance with the fourth example embodiment includes, in a processingstation 8, a multiple number of second liquid processing units 19B and amultiple number of removing units 710.

Each of the second liquid processing units 19B has the sameconfiguration as that of the second liquid processing unit 19A in thethird example embodiment. That is, the second liquid processing unit 19Bhas the same configuration as that of the second liquid processing unit19 of the first example embodiment excepting that the components relatedto a removing liquid supplying process, i.e., the nozzle 81 b, the valve84 b and the alkali developer supply source 85 b are omitted in thesecond liquid processing unit 19B.

Each of the removing units 710 is configured to remove a film formed ona wafer W by sublimation. Here, a configuration of the removing unit 710will be described with reference to FIG. 15. FIG. 15 is a schematicdiagram illustrating an example configuration of the removing unit 710in accordance with the fourth example embodiment.

In the fourth example embodiment, a liquid of a sublimation material isused as the film forming liquid. By way of non-limiting example,ammonium fluorosilicate, camphor, naphthalene or the like may be used asthe sublimation material. The film forming liquid is obtained bydissolving the sublimation material in a volatile solvent such as IPA.Such a film forming liquid is solidified or cured into a film as aresult of volatilization of IPA serving as the solvent. The film formingliquid may include pure water besides the sublimation material and theIPA.

As illustrated in FIG. 15, the removing unit 710 includes a hot plate701 having a heater 702 embedded therein, and a multiple number ofsupport pins 703 protruded from a top surface of the hot plate 701. Thesupport pins 703 support a peripheral portion of a rear surface of awafer W. Accordingly, a small gap is formed between the rear surface ofthe wafer W and the top surface of the hot plate 701.

Above the hot plate 701, there is provided an exhaust hood 704, which isconfigured to be moved up and down. The exhaust hood 704 has an openingat a central portion thereof. An exhaust line 705, at which asublimation material collecting device 706 and a pump 707 are provided,is connected to the opening of the hot plate 701. Here, as thesublimation material collecting device 706, there may be employedvarious commonly known sublimation material collecting devices, such asa device in which a sublimation material is precipitated on a coolingplate provided within a chamber through which an exhaust gas flows, or adevice in which a cooling fluid is contacted with a gas of a sublimationmaterial within a chamber through which an exhaust gas flows.

If a wafer W is mounted on the support pins 703 by the substratetransfer device 181, the removing unit 710 lowers the exhaust hood 704to form a processing space between the exhaust hood 704 and the hotplate 701. Subsequently, while exhausting the space above the wafer W bythe pump 707 provided on the exhaust line 705 connected to the exhausthood 704, the removing unit 710 heats the wafer W to a temperaturehigher than a sublimation temperature of the sublimation material by thetemperature-raised hot plate 701.

As a result, the sublimation material on the wafer W is sublimated andremoved from the wafer W. At this time, the sublimation material, whichhas been sublimated and tuned into a gas, is collected by thesublimation material collecting device 706 to be reused. Thereafter, thewafer W is taken out of the removing unit 710 and transferred into thesecond liquid processing unit 19B by the substrate transfer device 181.

As described above, the second processing apparatus 3B may perform theremoving process of removing the solidified or cured film forming liquidfrom the wafer W by heating the wafer W to a higher temperature than thesublimation temperature of the sublimation material contained in thefilm forming liquid. Further, the sublimation process adopted therein isnothing more than an example, and there may be employed a process ofdirectly overheating the sublimation material itself, and not thesubstrate, by a gas or the like. Further, the heating process may not beperformed, depending on a sublimation temperature of the sublimationmaterial.

Fifth Example Embodiment

The above example embodiments have been described for the case ofperforming the chemical liquid process as a post-treatment afterremoving the solidified or cured film forming liquid from the wafer W.However, the post-treatment may not be limited to the chemical liquidprocess. In a fifth example embodiment, an example of performing a dryetching process as the post-treatment will be described with referenceto FIG. 16. FIG. 16 is a diagram depicting a schematic configuration ofa second processing apparatus in accordance with the fifth exampleembodiment.

As illustrated in FIG. 16, a second processing apparatus 3C inaccordance with the fifth example embodiment includes, in a processingstation 8, a multiple number of removing units 720 and a multiple numberof dry etching units 800.

Each of the removing units 720 has the same configuration as that of theremoving unit 710 of the fourth example embodiment and is configured toremove a solidified or cured film forming liquid from a wafer W throughsublimation. Alternatively, the removing unit 720 may have the sameconfiguration as that of the removing unit 700 of the third exampleembodiment and may be configured to remove the solidified or cured filmforming liquid from the wafer W by using a removing liquid such as analkali developer.

Each of the dry etching units 800 has the same configuration as that ofthe dry etching unit 12 of the first example embodiment and isconfigured to perform a dry etching process on the wafer W from whichthe solidified or cured film forming liquid has been removed by theremoving unit 720. Upon the completion of the dry etching process, thewafer W is accommodated in the carrier C through the second unloadingprocess (block S110 of FIG. 8).

As stated above, the second processing apparatus 3C may implement thedry etching process as the post-treatment. That is, it is also possibleto apply the above-described film forming liquid supplying process andremoving process to a process in which a dry etching is performed as apre-treatment and then further performed as a post-treatment once more.

As one example of such a process, a hard mask etching of etching a hardmask may be performed as a pre-treatment, and, then, a main etching ofetching a target film on the wafer W may be performed as apost-treatment. By applying the above-described film forming liquidsupplying process and removing process to this process, it is possibleto suppress a reaction product P from growing after the hard masketching or to stabilize a profile of the target film when performing themain etching.

In case of performing the removing process by sublimation as describedin the fourth example embodiment, it is also possible to perform theremoving process within the dry etching unit 800.

Sixth Example Embodiment

The above example embodiments have been described for the case ofapplying the film forming liquid supplying process of supplying the filmforming liquid to the wafer W after the pre-treatment and the removingprocess of removing the solidified or cured film forming liquid from thewafer W to the process in which the dry etching is performed as thepre-treatment and the chemical liquid process or the dry etching processare performed as the post-treatment. However, the application of thefilm forming liquid supplying process and the removing process may notbe limited to the above example, and the film forming liquid supplyingprocess and the removing process as described above may also beapplicable to various processes performed in FEOL (Front End Of Line),MEOL (Middle End Of Line) and BEOL (Back End Of Line).

Accordingly, in this sixth example embodiment, various processes towhich the film forming liquid supplying process and the removing processare applied will be described with reference to FIG. 17. FIG. 17 is atable showing example processes to which the film forming liquidsupplying process and the removing process are applied.

The film forming liquid supplying process and the removing process areapplicable to a process which requires atmosphere management or timemanagement for a wafer W on which a pre-treatment is performed. Here,the term “atmosphere management” means, for example, controlling anatmosphere surrounding the wafer W after the pre-treatment to be aninert gas atmosphere. Further, the term “time management” means theQ-time management, which delimits and manages the time from apre-treatment to a post-treatment.

That is, the process to which the film forming liquid supplying processand the removing process are applied is a process in which theatmosphere management or the time management described above is requiredsince a portion of a surface of a wafer W is modified by being exposedto the atmosphere after being subject to a pre-treatment. By applyingthe film forming liquid supplying process and the removing process tothis process, the portion to be modified by being exposed to theatmosphere can be covered with the solidified or cured film formingliquid and blocked from the atmosphere. Thus, the atmosphere managementand the time management after the pre-treatment may become unnecessary.

As shown in FIG. 17, as an example of the process to which the filmforming liquid supplying process and the removing process areapplicable, there is a process of performing wet-cleaning(post-treatment) after the dry etching (pre-treatment). An example ofthis process may be a process described in the first example embodiment,i.e., a process of post-cleaning a wafer W by a chemical liquid afterexposing a metal layer (which is not limited to Cu but includes Co(cobalt), W (tungsten), or the like) within a wafer W through the dryetching. Further, examples of this process may be a process ofpost-cleaning a wafer W by a chemical liquid after patterning Si, SiO₂,SiN, a poly silicon gate electrode, a HKMG (High-k/Metal Gate), or thelike through the dry etching; a process of post-cleaning a wafer W by achemical liquid after forming a contact hole through the dry etching;and so forth. By applying the film forming liquid supplying process andthe removing process to these processes, it is possible to suppress thereaction products from growing after the pre-treatment, for example. Asfor the pre-treatment, the ashing as well as the dry etching may also beemployed, and even in case of performing the ashing as thepre-treatment, it is still possible to apply the film forming liquidsupplying process and the removing process.

In addition, as another example of a process to which the film formingliquid supplying process and the removing process are applicable, thereis a process of performing the dry etching (post-treatment) after thedry etching (pre-treatment). Such a process may be, for example, aprocess as described in the fifth example embodiment. In this case aswell, by applying the film forming liquid supplying process and theremoving process, the reaction products after the pre-treatment can besuppressed from growing.

As yet another example of a process to which the film forming liquidsupplying process and the removing process are applicable, there is aprocess of performing film formation (post-treatment) after filmformation (pre-treatment). Examples of such a process may include, butnot limited to, a process of forming a W layer on a wafer W afterforming a TiN layer on the wafer W, forming a Cu layer on a wafer Wafter forming a TaN layer on the wafer W, and so forth.

Here, among the film forming apparatuses configured to perform the filmforming processes, the film forming apparatus for the pre-treatment isarranged in the processing station of the first processing apparatus,whereas the film forming apparatus for the post-treatment is arranged inthe processing station of the second processing apparatus. As the filmforming apparatus, a plasma CVD apparatus may be used, but not limitedthereto and various commonly known techniques can be performed.

In addition, in case that a plasma CVD apparatus is used as a filmforming apparatus for the post-treatment and the removing process isperformed by sublimation as described in the fourth example embodiment,it is possible to perform the removing process within the plasma CVDapparatus. Further, in case that a film forming apparatus configured toperform the film formation by the wet process is used as the filmforming apparatus for the pre-treatment, it is possible to perform thefilm forming liquid supplying process within that film formingapparatus.

As still another example process to which the film forming liquidsupplying process and the removing process are applicable, there is aprocess of performing the film formation (post-treatment) after the wetcleaning (pre-treatment). This process may be, for example, a process offorming a metal film such as a barrier metal on a wafer W after removingan oxide film or foreign substances such as particles from the wafer Wby pre-cleaning the wafer W with a chemical liquid. By applying the filmforming liquid supplying process and the removing process to such aprocess, it is possible to suppress the formed metal film from beingoxidized or the particles from being attached onto the wafer W, forexample.

In case of applying the film forming liquid supplying process and theremoving process to a process in which the wet cleaning is performed asa pre-treatment, it is desirable to perform the removing process bysublimation as described in the fourth example embodiment.

That is, by performing the film forming liquid supplying process afterthe wet cleaning to form a film of the film forming liquid on the waferW, a pattern collapse in the drying process can be suppressed. Inaddition, by removing the film of the film forming liquid throughsublimation in the removing process, it is possible to remove the filmof the film forming liquid from the wafer W without causing the patterncollapse.

The process of performing the other surface process as described in thesecond example embodiment, the configurations of the first processingapparatus and the second processing apparatus as described in the thirdexample embodiment, and the removing process by sublimation as describedin the fourth example embodiment may be appropriately applied to each ofthe processes specified in FIG. 17.

Other Example Embodiments

The foregoing example embodiments have been described for the case ofusing a topcoat liquid or a sublimation material liquid as a filmforming liquid. However, the film forming liquid may not be limited tothese examples.

By way of non-limiting example, the film forming liquid may be aprocessing liquid including a phenolic resin. Since the phenolic resinis also subject to curing and shrinkage like the above-described acrylicresin, using the phenolic resin may be effective in applying a tensileforce to a reaction product P, like the topcoat liquid.

The film forming liquid including the phenolic resin may be, forexample, a resist liquid. The resist liquid is a film forming liquid forforming a resist film on a wafer W. Specifically, the resist liquidincludes a novolac resin.

If the resist liquid is used as the film forming liquid, a thinnercapable of dissolving the resist liquid may be used as the removingliquid. When using the thinner as the removing liquid, it is possible toskip a rinsing process after a removing liquid supplying process.Further, when using the resist liquid used as the film forming liquid,the removing liquid may be supplied after performing an exposure processof exposing, for example, the entire surface of the resist film formedon the wafer W. In this case, the removing liquid may be a developer ora thinner.

A synthetic resin contained in the film forming liquid is not limited tothe acrylic resin or the phenolic resin, and may not be particularlylimited as long as it is subject to cure shrinkage. For example, thesynthetic resin included in the film forming liquid may be an epoxyresin, a melanin resin, an urea resin, an unsaturated polyester resin,an alkyd resin, polyurethane, polyimide, polyethylene, polypropylene,polyvinylchloride, polystyrene, poly vinylacetate, polytetrafluoroethylene, an acrylonitrile butadiene styrene resin, anacrylonitrile styrene resin, polyamide, nylon, polyacetal,polycarbonate, modified polyphenylene ether, polybutylene terephthalate,polyethylene terephthalate, polyphenylene sulfide, polysulfon, polyetherether ketone, polyamide amide, and so forth.

In addition, an anti-reflection film liquid may be used as the filmforming liquid. The anti-reflection film liquid is a film forming liquidfor forming an anti-reflection film on a wafer W. Further, theanti-reflection film is also a protection film for reducing surfacereflection of the wafer W while increasing transmittance. If such ananti-reflection film liquid is used as the film forming liquid, the DIWcapable of dissolving the anti-reflection film liquid may be used as theremoving liquid.

Further, the film forming liquid may further include a certain chemicalliquid, which dissolves a material formed on the wafer W or foreignsubstances attached on the wafer W, in addition to the volatilecomponent and the synthetic resin. The “material formed on the wafer W”may refer to, for example, the Cu wiring 102, and the “foreignsubstances attached on the wafer W” means, for example, a reactionproduct P. In addition, the “certain chemical liquid” may be, but notlimited to, hydrogen fluoride, ammonium fluoride, hydrochloric acid,sulfuric acid, hydrogen peroxide water, phosphoric acid, acetic acid,nitric acid, ammonium hydroxide, organic acid, or an aqueous liquidcontaining ammonium fluoride. Since the adhesive strength of thereaction product P is weakened as a surface of the reaction product P isdissolved by the chemical liquid, the reaction product P may becomeeasily removable.

The “certain chemical liquid” is used under the condition of a smalletching amount, as compared to the chemical liquid used in the generalchemical liquid cleaning process in which the cleaning is performed onlyby using a chemical operation of the chemical liquid. Accordingly, it ispossible to remove the reaction product P more effectively, whilesuppressing erosion of the wafer W, as compared to the case of thegeneral chemical liquid cleaning process.

Although the above-described example embodiments have been described forthe case of using the alkali developer as the removing liquid, theremoving liquid may be prepared by adding hydrogen peroxide water to thealkali developer. By adding the hydrogen peroxide water to the alkalideveloper, surface roughening of the wafer W caused by the alkalideveloper may be suppressed.

In addition, the removing liquid may be an organic solvent such as athinner, toluene, acetic acid esters, alcohols, and glycols (propyleneglycol monomethyl ether), or an acidic developer such as acetic acid,formic acid, or hydroxy acetic acid.

In addition, the removing liquid may further include a surfactant. Sincethe surfactant has a function to weaken a surface tension, it cansuppress re-attachment of a reaction product P to a wafer W.

In addition, the above example embodiments have been described for thecase where the metal wiring formed within the wafer W is the Cu wiring102. However, the metal wiring is not limited to the Cu wiring 102. Inthis regard, the removing liquid for the topcoat film may contain ananticorrosive material appropriately selected depending on the kind ofthe metal wiring.

In addition, in the above-described example embodiments, a targetmaterial of the dry etching is described to be a metal wiring. However,the target material or structure to be etched by the dry etching may notbe limited to the metal wiring. Further, the substrate processing methodin accordance with the first example embodiment may also be applied to acase of removing a reaction product after a resist is removed by theashing. For example, the substrate processing method of the firstexample embodiment may also be effective when being applied to a wafercleaning which is performed after injecting ions by using a resistpattern as a mask and removing the resist by the ashing.

Furthermore, the above-described example embodiments have been describedfor the case of performing the chemical liquid process before the filmforming liquid supplying process and, also, after the removing liquidsupplying process. However, the chemical liquid process may be performedeither before the film forming liquid supplying process or after theremoving liquid supplying process. Moreover, the chemical liquid processmay not necessarily be performed.

In addition, in case of performing the chemical liquid process after theremoving liquid supplying process, the liquid supply unit 40_1 includedin the first liquid processing unit 14 may be provided in the secondliquid processing unit 19, or a separate processing unit configured toperform the chemical liquid cleaning may be additionally provided.

Further, the configuration of the substrate processing system 1 may notbe limited to that described in the foregoing example embodiments.

By way of example, the configuration of the liquid supply unit 80included in the second liquid processing unit 19 may be provided inanother film forming unit configured to perform a film forming processon a wafer W having undergone the processes up to block S107 of FIG. 8.That is, removing the topcoat film may be performed in another filmforming unit. Alternatively, a film forming unit may be provided in theprocessing station 8 of the second processing apparatus 3, and the filmforming process may be performed within the second liquid processingunit 19. In such a case, since the film forming process can be performedimmediately after the topcoat film is removed, the Q-time management canbe further facilitated.

From the foregoing, it will be appreciated that various embodiments ofthe present disclosure have been described herein for purposes ofillustration, and that various modifications may be made withoutdeparting from the scope and spirit of the present disclosure.Accordingly, the various embodiments disclosed herein are not intendedto be limiting, with the true scope and spirit being indicated by thefollowing claims.

We claim:
 1. A substrate processing method, comprising: a processingliquid supplying process of supplying a processing liquid, whichcontains a volatile component and forms a film on a substrate, onto thesubstrate on which a pre-treatment, which requires atmosphere managementor time management after the pre-treatment, is performed; and anaccommodating process of accommodating, in a transfer container, thesubstrate on which the processing liquid is solidified or cured byvolatilization of the volatile component.
 2. The substrate processingmethod of claim 1, wherein the pre-treatment is a process in which aportion to be modified by being exposed to the atmosphere is formed on asurface of the substrate.
 3. The substrate processing method of claim 1,further comprising: a unloading process of taking out the substrateaccommodated in the transfer container after the processing liquidsupplying process; and a removing process of removing the solidified orcured processing liquid from the substrate after the unloading process.4. The substrate processing method of claim 3, further comprising: apost-treatment process of performing a preset post-treatment on thesubstrate after the removing process.
 5. The substrate processing methodof claim 4, wherein the pre-treatment is a process in which dry etchingor ashing is performed on the substrate before the processing liquidsupplying process, and the post-treatment is a process in which wetcleaning is performed on the substrate after the removing process. 6.The substrate processing method of claim 4, wherein the pre-treatment isa process in which dry etching or ashing is performed on the substratebefore the processing liquid supplying process, and the post-treatmentis a process in which dry etching is performed on the substrate afterthe removing process.
 7. The substrate processing method of claim 4,wherein the pre-treatment is a process in which a metal film is formedin the substrate before the processing liquid supplying process, and thepost-treatment is a process in which a metal film is formed on thesubstrate after the removing process.
 8. The substrate processing methodof claim 4, wherein the pre-treatment is a process in which wet cleaningis performed on the substrate before the processing liquid supplyingprocess, and the post-treatment is a process in which a metal film isformed on the substrate after the removing process.
 9. The substrateprocessing method of claim 4, wherein the pre-treatment is a process inwhich wet cleaning is performed on the substrate before the processingliquid supplying process, the processing liquid is a liquid of asublimation material, and in the removing process, the solidified orcured processing liquid is removed from the substrate by sublimation.10. The substrate processing method of claim 1, further comprising: another surface process of processing, in a state that an entire mainsurface of the substrate is covered with the solidified or curedprocessing liquid, an other surface of the substrate.
 11. The substrateprocessing method of claim 1, further comprising: a pre-treatmentprocess of performing the pre-treatment on the substrate.
 12. Thesubstrate processing method of claim 3, wherein, in the removingprocess, the solidified or cured processing liquid is removed from thesubstrate by supplying a removing liquid.
 13. The substrate processingmethod of claim 12, wherein the removing liquid contains ananticorrosive material for a metal wiring formed in the substrate.
 14. Asubstrate processing apparatus, comprising: a mounting unit configuredto mount thereon a transfer container accommodating a plurality ofsubstrates therein; a processing liquid supplying unit configured tosupply a processing liquid, which contains a volatile component andforms a film on a substrate, onto the substrate on which apre-treatment, which requires atmosphere management or time managementafter the pre-treatment, is performed; and a substrate transfer deviceconfigured to transfer the substrate, on which the processing liquid issolidified or cured by volatilization of the volatile component, to themounting unit and accommodate the substrate in the transfer containermounted on the mounting unit.
 15. The substrate processing apparatus ofclaim 14, further comprising: a pre-treatment unit configured to performthe pre-treatment on the substrate.
 16. The substrate processingapparatus of claim 14, further comprising: an other surface processingunit configured to process, in a state that an entire main surface ofthe substrate is covered with the solidified or cured processing liquid,an other surface of the substrate.
 17. The substrate processingapparatus of claim 15, further comprising: a first block including thepre-treatment unit; a second block including the processing liquidsupplying unit; and a connecting unit that has an internal space blockedfrom an atmosphere and connects the first block and the second block toeach other.
 18. A substrate processing apparatus comprising: a mountingunit configured to mount thereon a transfer container accommodating aplurality of substrates therein; a removing unit configured to remove,from a substrate onto which atmosphere management or time management isperformed by supplying a processing liquid, which contains a volatilecomponent and forms a film on the substrate, on the substrate and byallowing the processing liquid to be solidified or cured byvolatilization of the volatile component, the solidified or curedprocessing liquid; a post-treatment unit configured to perform a presetpost-treatment on the substrate from which the solidified or curedprocessing liquid is removed by the removing unit; and a substratetransfer device configured to transfer the substrate, which ispost-processed by the post-treatment unit, to the mounting unit andaccommodate the substrate in the transfer container mounted on themounting unit.
 19. The substrate processing apparatus of claim 18,further comprising: an other surface processing unit configured toprocess, in a state that an entire main surface of the substrate iscovered with the solidified or cured processing liquid, an other surfaceof the substrate.
 20. The substrate processing apparatus of claim 18,further comprising: a first block including the mounting unit, thesubstrate transfer device and the post-treatment unit; a second blockincluding the removing unit; and a connecting unit that has an internalspace blocked from an atmosphere and connects the first block and thesecond block to each other.
 21. A computer-readable storage mediumhaving stored thereon computer-executable instructions that, in responseto execution, cause a substrate processing apparatus to perform asubstrate processing method as claimed in claim 1.